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2SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: Yfs = 28 S (typ.) Low leakage current: IDSS = 100 A (VDS = 100 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 30 45 180 125 468 45 12.5 150 -55~150 Unit V V V A W mJ A mJ C C
Pulse (Note 1) (Tc = 25C)
Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-97 2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W
Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin.
4
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2 VDD = 25 V, Tch = 25C (initial), L = 373 H, RG = 25 , IAR = 45 A
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
2 3
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2SK3442
Marking
Part No. (or abbreviation code)
K3442
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Electrical Characteristics (Note 4) (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 80 V, VGS = 10 V, ID = 45 A - Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 4.7 ID = 23 A VOUT RL = 2.2 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 23 A VDS = 10 V, ID = 23 A Min 100 2.0 14 Typ. 15 28 4100 340 980 15 45 20 95 85 50 35 Max 10 100 4.0 20 ns nC pF Unit A A V V m S
Duty < 1%, tw = 10 s =
VDD 50 V -
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition IDR = 45 A, VGS = 0 V IDR = 45 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 160 512 Max 45 180 1 4 -1.5 Unit A A A A V ns nC
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
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2SK3442
ID - VDS
100 Common source Tc = 25C 80 Pulse test 15 10 200 8 7 160 10
ID - VDS
8
Drain current ID (A)
60
Drain current ID (A)
7.5
6.5
120
7
40 VGS = 6 V 20
80
6.5
40
VGS = 6 V Common source Tc = 25C Pulse test 0 4 8 12 16 20
0
0
0.4
0.8
1.2
1.6
2.0
0
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
100 Common source 80 VDS = 10 V Pulse test 25 60 Tc = 100C 40 5
VDS - VGS
Common source
VDS (V)
Tc = 25C 4 Pulse test
Drain current ID (A)
Drain-source voltage
3
2 11 1 23 ID = 45 A
20 -55 0 0 4 8 12 16 20
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
500 500 Common source VDS = 10 V 100 50 30 25 10 5 3 -55 Tc = 100C Pulse test 300
RDS (ON) - ID
Common source Tc = 25C
Forward transfer admittance Yfs
(S)
300
Drain-source on resistance RDS (ON) (m)
100 50 30 VGS = 10 V 10 5 3 15
Pulse test
1 0.1
0.3 0.5
1
3
5
10
30 50
100
1 1
3
5
10
30 50
100
300 500 1000
Drain current ID (A)
Drain current ID (A)
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2SK3442
RDS (ON) - Tc
(m)
50 Common source VGS = 10 V Pulse test 45 30 1000 Common source Tc = 25C 300 Pulse test 100
IDR - VDS
Drain-source on resistance RDS (ON)
40
Drain reverse current IDR
(A)
11 ID = 23 A
30 10 10 5 3 3 VGS = 0 V
20
10
0 -80
-40
0
40
80
120
160
1 0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
50000 30000 6
Vth - Tc
Common source
Vth (V)
5
VDS = 10 V ID = 1 mA Pulse test
(pF)
10000 5000 Ciss
4
3000
Gate threshold voltage
Capacitance C
3
1000 500 Common source 300 VGS = 0 V f = 1 MHz Tc = 25C 100 0.1 0.3 0.5 Coss Crss
2
1
1
3
5
10
30 50
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Case temperature Tc
(C)
PD - Tc
200 100
Dynamic input/output characteristics
Common source ID = 45 A Tc = 25C Pulse test 20
Drain power dissipation PD (W)
VDS (V)
160
80
16
Drain-source voltage
VDD = 80 V 40 VGS 20 4 40 8
80
40
10 0
40
80
120
160
200
0 0
40
80
120
160
0 200
Case temperature Tc
(C)
Total gate charge Qg (nC)
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Gate-source voltage
120
60
20
12
VGS (V)
VDS
2SK3442
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
3
1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 Single pulse 100 1m 10 m 100 m PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1 10
Pulse width
tw
(s)
Safe operating area
1000 500
EAS - Tch
300
Avalanche energy EAS (mJ)
ID max (pulsed) * 100 s * 1 ms * ID max (continuous)
400
100
300
(A)
30
Drain current ID
200
10
DC operation
100
3 0 25 1 * Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 50 75 100 125 150 175
Channel temperature (initial) Tch (C)
VDSS max 100 300 1000
15 V 0V
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 25 V, L = 373 H
Wave form
AS =
1 B VDSS L I2 B 2 - VDD VDSS
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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